

Manufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 900W (Tj) |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 510A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 35000pF @ 400V |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 510A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 1800nC @ 18V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.3V @ 150mA |
| Supplier Device Package | SSDC39 |
| Grade | Automotive |
| Qualification | AEC-Q101 |