NVXK2TR40WXT
APM32 SIC H-BRIDGE POWER MODULEManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Mosfet Array 1200V (1.2kV) 27A (Tc) 319W (Tc) Through Hole APM32
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 32-PowerDIP Module (1.311"", 33.30mm) |
| Mounting Type | Through Hole |
| Configuration | 4 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 319W (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1789pF @ 800V |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 35A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 106nC @ 20V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.3V @ 10mA |
| Supplier Device Package | APM32 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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