NVXK2PR80WXT2
APM32 SIC POWER MODULEManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Mosfet Array 1200V (1.2kV) 31A (Tc) 208W (Tc) Through Hole APM32
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 32-PowerDIP Module (1.449"", 36.80mm) |
| Mounting Type | Through Hole |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 208W (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1154pF @ 800V |
| Rds On (Max) @ Id, Vgs | 116mOhm @ 20A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 20V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.3V @ 5mA |
| Supplier Device Package | APM32 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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