NVTJD4001NT2G
MOSFET 2N-CH 30V 0.25A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NVTJD4001NT2G is a dual N-channel MOSFET array designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 250mA at 25°C. The MOSFET array offers a maximum power dissipation of 272mW and exhibits a low Rds On of 1.5 Ohm at 10mA and 4V. Key parameters include a Gate Charge (Qg) of 1.3nC (max) at 5V and an Input Capacitance (Ciss) of 33pF (max) at 5V. The threshold voltage (Vgs(th)) is 1.5V (max) at 100µA. This device is qualified to AEC-Q101 standards, making it suitable for automotive applications. It is supplied in a 6-TSSOP, SC-88, SOT-363 package and delivered on tape and reel. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 272mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 250mA |
| Input Capacitance (Ciss) (Max) @ Vds | 33pF @ 5V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 10mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 1.3nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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