NVMFD5877NLWFT3G
MOSFET 2N-CH 60V 6A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NVMFD5877NLWFT3G is a dual N-channel MOSFET array designed for demanding applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 6A at 25°C, with a low on-resistance of 39mOhm at 7.5A and 10V Vgs. The logic-level gate threshold ensures compatibility with a wide range of control signals. With a maximum power dissipation of 3.2W, it is suitable for surface mount integration using the 8-DFN (5x6) Dual Flag (SO8FL-Dual) package. The device's high operating temperature range of -55°C to 175°C (TJ) and AEC-Q101 qualification make it ideal for automotive and industrial power management systems. Its input capacitance is rated at 540pF maximum at 25V, and gate charge is 20nC maximum at 10V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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