NVMFD5877NLT1G
MOSFET 2N-CH 60V 6A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NVMFD5877NLT1G is a dual N-channel MOSFET array designed for automotive applications. This component features a 60V drain-to-source voltage rating and a continuous drain current capability of 6A at 25°C. With a low on-resistance of 39mOhm at 7.5A and 10V, it offers efficient power handling. The device utilizes MOSFET technology and is housed in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) package, suitable for surface mounting. Key specifications include a maximum power dissipation of 3.2W and a gate charge of 20nC at 10V. The NVMFD5877NLT1G meets AEC-Q101 qualification standards, making it suitable for demanding automotive environments. This component is commonly employed in automotive power management and control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Grade | Automotive |
| Qualification | AEC-Q101 |