NVMFD5875NLWFT1G
MOSFET 2N-CH 60V 7A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NVMFD5875NLWFT1G is a dual N-channel MOSFET array designed for high-performance applications. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C. With an Rds(On) of 33mOhm maximum at 7.5A and 10V, it offers efficient power switching. The logic level gate input simplifies drive requirements. Packaged in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) for surface mounting, this component dissipates up to 3.2W. It operates across a wide temperature range of -55°C to 175°C and is AEC-Q101 qualified, making it suitable for automotive and industrial power management systems. Key parameters include a maximum gate charge of 20nC at 10V and an input capacitance of 540pF at 25V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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