NVMFD5875NLT1G
MOSFET 2N-CH 60V 7A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The onsemi NVMFD5875NLT1G is a dual N-channel MOSFET array designed for automotive applications. This AEC-Q101 qualified component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) capability of 7A. The MOSFETs offer a low Rds On of 33mOhm at 7.5A and 10V, with a Gate Charge (Qg) of 20nC at 10V. Its 8-DFN (5x6) Dual Flag (SO8FL-Dual) package facilitates surface mounting. This device operates within a temperature range of -55°C to 175°C and dissipates a maximum power of 3.2W. The technology employed is Metal Oxide MOSFET with a logic-level gate feature. Industries utilizing this component include automotive and industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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