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NVMFD5873NLWFT1G

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NVMFD5873NLWFT1G

MOSFET 2N-CH 60V 10A 8DFN

Manufacturer: onsemi

Categories: FET, MOSFET Arrays

Quality Control: Learn More

onsemi's NVMFD5873NLWFT1G is a dual N-channel MOSFET designed for automotive applications. This AEC-Q101 qualified component features a 60V drain-source breakdown voltage and a continuous drain current capability of 10A at 25°C. With a low on-resistance of 13mOhm at 15A and 10V, and a logic-level gate, it is optimized for efficient power switching. The device offers a maximum power dissipation of 3.1W and is housed in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) surface-mount package, supplied on tape and reel. Key parameters include a gate charge of 30.5nC at 10V and input capacitance of 1560pF at 25V. It operates across a wide temperature range of -55°C to 175°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max3.1W
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C10A
Input Capacitance (Ciss) (Max) @ Vds1560pF @ 25V
Rds On (Max) @ Id, Vgs13mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs30.5nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-DFN (5x6) Dual Flag (SO8FL-Dual)
GradeAutomotive
QualificationAEC-Q101

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