NVMFD5873NLWFT1G
MOSFET 2N-CH 60V 10A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi's NVMFD5873NLWFT1G is a dual N-channel MOSFET designed for automotive applications. This AEC-Q101 qualified component features a 60V drain-source breakdown voltage and a continuous drain current capability of 10A at 25°C. With a low on-resistance of 13mOhm at 15A and 10V, and a logic-level gate, it is optimized for efficient power switching. The device offers a maximum power dissipation of 3.1W and is housed in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) surface-mount package, supplied on tape and reel. Key parameters include a gate charge of 30.5nC at 10V and input capacitance of 1560pF at 25V. It operates across a wide temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Input Capacitance (Ciss) (Max) @ Vds | 1560pF @ 25V |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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