NVMFD5873NLT1G
MOSFET 2N-CH 60V 10A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NVMFD5873NLT1G is a dual-channel N-channel MOSFET array designed for demanding automotive applications. This AEC-Q101 qualified component features a 60V drain-source breakdown voltage and a continuous drain current capability of 10A at 25°C. Optimized for efficiency, it offers a low Rds(on) of 13mOhm at 15A and 10V, with a logic-level gate for reduced drive requirements. The device boasts a low gate charge (Qg) of 30.5nC at 10V and a maximum input capacitance (Ciss) of 1560pF at 25V. With a power dissipation of 3.1W, it operates across an extended temperature range of -55°C to 175°C. The 8-DFN (5x6) Dual Flag (SO8FL-Dual) package facilitates efficient heat dissipation and compact board layout. This MOSFET array is suitable for power management solutions in automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Input Capacitance (Ciss) (Max) @ Vds | 1560pF @ 25V |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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