NVMFD5853NT1G
MOSFET 2N-CH 40V 12A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NVMFD5853NT1G is a dual N-channel MOSFET array designed for high-efficiency power applications. This AEC-Q101 qualified component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C. With a low Rds(On) of 10mOhm at 15A and 10V, it minimizes conduction losses. The device operates with a logic level gate and has a maximum gate charge (Qg) of 24nC. Its 8-DFN (5x6) Dual Flag (SO8FL-Dual) package facilitates efficient thermal management, with a maximum power dissipation of 3.1W. The NVMFD5853NT1G is suitable for automotive applications, including power management and motor control. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 12A |
| Input Capacitance (Ciss) (Max) @ Vds | 1225pF @ 25V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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