NVMFD5853NLWFT1G
MOSFET 2N-CH 40V 12A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The onsemi NVMFD5853NLWFT1G is a dual N-channel MOSFET array designed for high-performance applications. This AEC-Q101 qualified component features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C. With a low Rds On of 10mOhm at 15A and 10V, and a logic-level gate, it ensures efficient power switching. The device boasts a maximum power dissipation of 3W and operates across a wide temperature range of -55°C to 175°C. Its 8-DFN (5x6) Dual Flag package, also known as SO8FL-Dual, offers excellent thermal performance for surface mounting. Key electrical characteristics include an input capacitance (Ciss) of 1100pF at 25V and a gate charge (Qg) of 23nC at 10V. This MOSFET array is suitable for demanding automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 12A |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
NVLJD4007NZTBG
MOSFET 2N-CH 30V 0.245A 6WDFN
NVMFD5485NLT1G
MOSFET 2N-CH 60V 5.3A 8DFN
ECH8691-TL-W
MOSFET 2P-CH ECH8
