NVMFD5853NLT1G
MOSFET 2N-CH 40V 12A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NVMFD5853NLT1G is a dual N-channel MOSFET array designed for demanding automotive applications. This device features a 40V drain-source breakdown voltage and can handle a continuous drain current of 12A at 25°C. The low on-resistance of 10mOhm at 15A and 10V (Vgs) ensures efficient power delivery. Engineered with a logic-level gate, it offers compatibility with lower voltage gate drive signals. The MOSFET array is packaged in an 8-PowerTDFN (5x6) Dual Flag (SO8FL-Dual) for efficient heat dissipation, rated at 3W maximum power. Key electrical characteristics include a maximum gate charge of 23nC at 10V and input capacitance of 1100pF at 25V. The component operates across a wide temperature range of -55°C to 175°C and is AEC-Q101 qualified, making it suitable for powertrain, body electronics, and infotainment systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 12A |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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