NVMFD5852NLT1G
MOSFET 2N-CH 40V 15A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NVMFD5852NLT1G is a dual N-channel MOSFET array designed for high-performance applications. It features a 40V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 15A at 25°C. With a low on-resistance of 6.9mOhm at 20A and 10V, this MOSFET array minimizes conduction losses. The device operates with a Logic Level Gate and has a gate charge (Qg) of 36nC maximum at 10V. Packaged in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) surface mount configuration, it offers efficient thermal dissipation with a maximum power rating of 3.2W. The input capacitance (Ciss) is 1800pF maximum at 25V. Qualified to AEC-Q101 standards, this component is suitable for automotive applications and operates across a wide temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.2W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 15A |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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