NVMFD5489NLT1G
MOSFET 2N-CH 60V 4.5A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NVMFD5489NLT1G is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 4.5A at 25°C. With a low Rds On of 65mOhm at 15A and 10V, it minimizes conduction losses. The logic level gate ensures compatibility with a wider range of gate drive voltages.
Fabricated with MOSFET technology, the NVMFD5489NLT1G is packaged in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) for efficient heat dissipation and surface mounting. Its low input capacitance (Ciss) of 330pF at 25V and a gate charge (Qg) of 12.4nC at 10V contribute to faster switching speeds. The component is rated for a maximum power dissipation of 3W and operates across a wide temperature range of -55°C to 175°C. Qualified to AEC-Q101 standards, this MOSFET array is suitable for demanding automotive applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12.4nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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