NVMFD5485NLWFT1G
MOSFET 2N-CH 60V 5.3A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NVMFD5485NLWFT1G is a dual N-channel MOSFET array designed for automotive applications. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.3A at 25°C. The device is constructed using MOSFET technology and offers a low on-resistance (Rds On) of 44mOhm maximum at 15A and 10V. Key features include a logic level gate, 250µA gate threshold voltage (Vgs(th)) at 2.5V, and a maximum gate charge (Qg) of 20nC at 10V. The NVMFD5485NLWFT1G is qualified to AEC-Q101 standards and has a maximum power dissipation of 2.9W. It is supplied in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) package, suitable for surface mounting. This component is typically utilized in automotive power management and control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.9W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 25V |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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