NVMFD5483NLWFT1G
MOSFET 2N-CH 60V 6.4A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NVMFD5483NLWFT1G is a Dual N-Channel MOSFET array designed for demanding automotive applications, qualified to AEC-Q101 standards. This component features a 60V Drain-Source Voltage (Vdss) and a continuous drain current capability of 6.4A at 25°C. The low on-resistance of 36mOhm is achievable at 15A and 10V Vgs, with a maximum power dissipation of 3.1W. Operating within an extended temperature range of -55°C to 175°C, this device utilizes Metal Oxide technology and a logic-level gate for efficient drive. The 8-DFN (5x6) Dual Flag (SO8FL-Dual) package facilitates surface mounting, and the component is supplied on tape and reel. Key electrical parameters include a maximum gate charge of 23.4nC at 10V and an input capacitance (Ciss) of 668pF at 25V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 668pF @ 25V |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23.4nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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