NVMFD5483NLT3G
MOSFET 2N-CH 60V 6.4A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NVMFD5483NLT3G is a dual N-channel MOSFET array designed for automotive applications. This AEC-Q101 qualified component features a 60V drain-source voltage (Vdss) and can handle a continuous drain current (Id) of 6.4A at 25°C. The device operates with a logic-level gate and offers a low on-resistance (Rds On) of 36mOhm maximum at 15A and 10V. Specified with a gate charge (Qg) of 23.4nC maximum at 10V and input capacitance (Ciss) of 668pF maximum at 25V, this MOSFET array is suitable for power management and switching applications within the automotive sector. Its robust construction allows for operation across a wide temperature range of -55°C to 175°C. The NVMFD5483NLT3G is supplied in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) package, measuring 5x6mm, and is provided on tape and reel. The maximum power dissipation is rated at 3.1W.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 668pF @ 25V |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23.4nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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