NVMFD5483NLT1G
MOSFET 2N-CH 60V 6.4A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NVMFD5483NLT1G is a dual N-channel power MOSFET designed for demanding automotive applications. This AEC-Q101 qualified component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.4A at 25°C. The low on-resistance of 36mOhm at 15A and 10V, coupled with a 3.1W maximum power dissipation, makes it suitable for efficient power switching. The logic-level gate drive simplifies interface requirements. Packaged in an 8-PowerTDFN (5x6) Dual Flag (SO8FL-Dual) for surface mounting, it operates across a wide temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 23.4nC at 10V and input capacitance (Ciss) of 668pF at 25V. This MOSFET array is utilized in automotive power management and control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 668pF @ 25V |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23.4nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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