NVMD6P02R2G
MOSFET 2P-CH 20V 4.8A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
onsemi NVMD6P02R2G is a 2 P-Channel Power MOSFET array designed for automotive applications. This AEC-Q101 qualified component features a 20V drain-source breakdown voltage and a continuous drain current capability of 4.8A per channel at 25°C. With a maximum power dissipation of 750mW and a low Rds(on) of 33mOhm at 6.2A and 4.5V Vgs, it offers efficient switching performance. The device utilizes MOSFET technology and is packaged in an 8-SOIC (0.154", 3.90mm width) surface-mount configuration, supplied on tape and reel. Key parameters include a logic level gate, an input capacitance of 1700pF (max) at 16V Vds, and a gate charge of 35nC (max) at 4.5V Vgs. This component is suitable for power management and control functions within the automotive sector.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 750mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 16V |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 6.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Grade | Automotive |
| Qualification | AEC-Q101 |