NVMD6N04R2G
MOSFET 2N-CH 40V 4.6A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NVMD6N04R2G is a dual N-channel MOSFET array designed for automotive applications. This AEC-Q101 qualified component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 4.6A at 25°C. The Rds(On) is specified at a maximum of 34mOhm at 5.8A and 10V. With a gate charge (Qg) of 30nC (max) at 10V and input capacitance (Ciss) of 900pF (max) at 32V, this device offers efficient switching characteristics. The NVMD6N04R2G is housed in an 8-SOIC package, enabling surface mount assembly. Its power dissipation is rated at 1.29W. This MOSFET array is suitable for use in automotive control systems and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.29W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 32V |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 5.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Grade | Automotive |
| Qualification | AEC-Q101 |