The onsemi NVLUD4C26NTAG is a MOSFET array featuring two N-channel devices in a 6-UDFN (2x2) exposed pad package. This automotive-grade component offers a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 4.8A per channel at 25°C. With a maximum Rds(On) of 21mOhm at 6A and 10V, it is suitable for efficient power switching. The device exhibits an input capacitance (Ciss) of 460pF at 15V and a gate charge (Qg) of 9nC at 4.5V. Rated for a maximum power dissipation of 720mW, it operates within an ambient temperature range of -55°C to 150°C. This component is qualified to AEC-Q101 standards, indicating its suitability for automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 720mW (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 15V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | 6-UDFN (2x2) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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