NVLJD4007NZTBG
MOSFET 2N-CH 30V 0.245A 6WDFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NVLJD4007NZTBG, a dual N-channel MOSFET array, features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 245mA at 25°C. This logic-level gate device is presented in a 6-WDFN (2x2) exposed pad package, suitable for surface mounting. Key electrical characteristics include a maximum on-resistance (Rds On) of 7 Ohms at 125mA and 4.5V, a maximum gate charge (Qg) of 0.75nC at 4.5V, and a maximum input capacitance (Ciss) of 20pF at 5V. The NVLJD4007NZTBG offers a maximum power dissipation of 755mW and operates across a temperature range of -55°C to 150°C. Qualified to AEC-Q101 for automotive applications, this component is utilized in automotive systems and other demanding electronic designs. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 755mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 245mA |
| Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 5V |
| Rds On (Max) @ Id, Vgs | 7Ohm @ 125mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.75nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Supplier Device Package | 6-WDFN (2x2) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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