NVDD5894NLT4G
MOSFET 2N-CH 40V 14A 5DPAKManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NVDD5894NLT4G is a dual N-channel MOSFET array designed for demanding applications. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) capability of 14A at 25°C. With a low on-resistance (Rds On) of 10mOhm at 50A and 10V, it minimizes conduction losses. The device is housed in a TO-252-5, DPAK (4 Leads + Tab) package, suitable for surface mounting, and dissipates a maximum power of 3.8W. Key electrical parameters include a gate charge (Qg) of 41nC (max) at 10V and input capacitance (Ciss) of 2103pF (max) at 25V. The NVDD5894NLT4G is AEC-Q101 qualified, indicating its suitability for automotive applications, and operates within a temperature range of -55°C to 175°C (TJ). It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-5, DPAK (4 Leads + Tab), TO-252AD |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.8W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 14A |
| Input Capacitance (Ciss) (Max) @ Vds | 2103pF @ 25V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 50A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK-5 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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