NTZD5110NT5G
MOSFET 2N-CH 60V 0.294A SOT563Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NTZD5110NT5G, a 2-N-channel MOSFET array, features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 294mA at 25°C. This device is configured as a dual N-channel MOSFET with a logic level gate, specified with a gate charge (Qg) of 0.7nC maximum at 4.5V. The input capacitance (Ciss) is 24.5pF maximum at 20V, and the on-resistance (Rds On) is 1.6 Ohm maximum at 500mA and 10V. Operating within a temperature range of -55°C to 150°C, the NTZD5110NT5G is housed in a compact SOT-563 surface mount package and dissipates a maximum power of 250mW. This component is suitable for applications in consumer electronics and industrial automation. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 294mA |
| Input Capacitance (Ciss) (Max) @ Vds | 24.5pF @ 20V |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-563 |
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