NTZD3158PT1G
MOSFET 2P-CH 20V 430MA SOT563Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTZD3158PT1G is a 2 P-Channel MOSFET array designed for high-density applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 430mA at 25°C. With a maximum power dissipation of 250mW and a low on-resistance of 900mOhm at 430mA and 4.5V Vgs, it offers efficient switching performance. The device is housed in a compact SOT-563 surface mount package, facilitating miniaturization in designs. Key parameters include a gate charge (Qg) of 2.5nC at 4.5V and an input capacitance (Ciss) of 175pF at 16V. This MOSFET array is commonly utilized in power management circuits, mobile devices, and portable electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 430mA |
| Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 16V |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 430mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-563 |
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