NTZD3156CT2G
MOSFET N/P-CH 20V SOT563Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTZD3156CT2G is a complementary N-channel and P-channel MOSFET array designed for efficient switching applications. This device features a 20V drain-source voltage rating and offers continuous drain currents of 540mA for the N-channel and 430mA for the P-channel, both specified at 25°C. With a maximum power dissipation of 250mW and an Rds(On) of 550mOhm at 540mA and 4.5V Vgs, it is suitable for low-power, high-density designs. The logic-level gate ensures compatibility with a wide range of control signals. Key parameters include a gate charge (Qg) of 2.5nC at 4.5V and input capacitance (Ciss) of 72pF at 16V. The NTZD3156CT2G is housed in a compact SOT-563 package and is supplied on tape and reel. This component finds application in portable electronics, battery management systems, and various power control circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 540mA, 430mA |
| Input Capacitance (Ciss) (Max) @ Vds | 72pF @ 16V |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 540mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-563 |