NTZD3155CT1H
MOSFET N/P-CH 20V SOT563Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi's NTZD3155CT1H is a P-channel and N-channel MOSFET array designed for efficient power management. This device features a 20V Drain-to-Source voltage rating with continuous drain currents of 540mA for the N-channel and 430mA for the P-channel at 25°C. The NTZD3155CT1H offers a maximum power dissipation of 250mW and a low on-resistance of 550mOhm at 540mA, 4.5V. Key parameters include a gate charge of 2.5nC at 4.5V and input capacitance of 150pF at 16V. The MOSFET array is housed in a compact SOT-563 package, suitable for surface mount applications. Operating across a temperature range of -55°C to 150°C, this component finds utility in automotive and industrial electronics. The NTZD3155CT1H is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 540mA, 430mA |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 16V |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 540mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-563 |
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