NTZD3154NT1H
MOSFET 2N-CH 20V 0.54A SOT563Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTZD3154NT1H is a dual N-channel MOSFET array in a SOT-563 package. This component features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 540mA at 25°C. The device offers a maximum on-resistance (Rds On) of 550mOhm at 540mA and 4.5V, with a gate charge (Qg) of 2.5nC at 4.5V. Input capacitance (Ciss) is specified at 150pF at 16V. The NTZD3154NT1H operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 250mW. This surface-mount device is commonly utilized in automotive and industrial applications. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 540mA |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 16V |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 540mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-563 |
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