NTZD3152PT5G
MOSFET 2P-CH 20V 0.43A SOT563Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTZD3152PT5G is a dual P-channel MOSFET array packaged in a compact SOT-563 (SOT-666) surface-mount configuration. This device offers a 20V drain-to-source breakdown voltage and a continuous drain current capability of 430mA at 25°C, with a maximum power dissipation of 250mW. Key electrical parameters include a gate charge (Qg) of 2.5nC at 4.5V and input capacitance (Ciss) of 175pF at 16V. The on-resistance (Rds On) is specified at 900mOhm maximum at 430mA and 4.5V, with a threshold voltage (Vgs(th)) of 1V maximum at 250µA. This component is suitable for applications in consumer electronics, portable devices, and power management circuits. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 430mA |
| Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 16V |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 430mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-563 |
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