NTZD3152PT1H
MOSFET 2P-CH 20V 0.43A SOT563Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTZD3152PT1H is a dual P-channel MOSFET array designed for surface-mount applications. It features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of up to 430mA at 25°C. With a maximum power dissipation of 250mW and an Rds On rating of 900mOhm at 430mA and 4.5V, this component is suitable for power management in various electronic systems. The device exhibits a gate charge (Qg) of 2.5nC at 4.5V and an input capacitance (Ciss) of 175pF at 16V. The NTZD3152PT1H is supplied in a SOT-563 package and operates within a temperature range of -55°C to 150°C. This MOSFET array finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 430mA |
| Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 16V |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 430mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-563 |
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