NTUD3171PZT5G
MOSFET 2P-CH 20V 0.2A SOT963Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTUD3171PZT5G is a P-channel MOSFET array featuring two independent transistors within a compact SOT-963 package. With a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 200mA at 25°C, this component is suitable for low-power switching applications. The Rds On specification is up to 5 Ohms at 100mA and 4.5V, and it operates with a logic level gate. Its low input capacitance of 13.5pF at 15V and maximum power dissipation of 125mW make it ideal for space-constrained designs. This MOSFET array is commonly utilized in consumer electronics and portable device power management. The NTUD3171PZT5G is supplied on a tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 125mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 200mA |
| Input Capacitance (Ciss) (Max) @ Vds | 13.5pF @ 15V |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 100mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-963 |
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