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NTUD3129PT5G

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NTUD3129PT5G

MOSFET 2P-CH 20V 0.14A SOT963

Manufacturer: onsemi

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The onsemi NTUD3129PT5G is a 2 P-Channel MOSFET array designed for surface mount applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 140mA at 25°C. The device exhibits a maximum Rds On of 5 Ohms at 100mA and 4.5V Vgs, with a power dissipation of 125mW. The logic level gate feature simplifies interfacing with low-voltage control signals. With an input capacitance (Ciss) of 12pF at 15V, this MOSFET array is suited for use in portable electronics and consumer applications. It is supplied in a SOT-963 package on tape and reel for automated assembly. The NTUD3129PT5G operates across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-963
Mounting TypeSurface Mount
Configuration2 P-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max125mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C140mA
Input Capacitance (Ciss) (Max) @ Vds12pF @ 15V
Rds On (Max) @ Id, Vgs5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs-
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageSOT-963

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