NTUD3128NT5G
MOSFET 2N-CH 20V 0.16A SOT963Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTUD3128NT5G is a dual N-channel MOSFET array designed for high-density surface mount applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 160mA at 25°C. With a maximum on-resistance (Rds On) of 3Ohm at 100mA and 4.5V Vgs, it offers efficient switching characteristics. The device operates with a logic level gate and has an input capacitance (Ciss) of 9pF at 15V. Rated for a maximum power dissipation of 125mW, it is packaged in a compact SOT-963 configuration and supplied on tape and reel. The NTUD3128NT5G is suitable for use in consumer electronics and portable device applications requiring space-saving and low-power switching solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 125mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 160mA |
| Input Capacitance (Ciss) (Max) @ Vds | 9pF @ 15V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 100mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-963 |
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