NTUD3127CT5G
MOSFET N/P-CH 20V 0.16A SOT963Manufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The onsemi NTUD3127CT5G is a MOSFET array featuring complementary N-channel and P-channel transistors in a single SOT-963 package. This device offers a 20V drain-to-source voltage with continuous drain currents of 160mA for the N-channel and 140mA for the P-channel at 25°C. The MOSFETs have a maximum power dissipation of 125mW and an Rds On of 3 Ohm at 100mA, 4.5V for the N-channel and a similar characteristic for the P-channel. Designed with a logic level gate feature, it has a gate threshold voltage of 1V at 250µA. Input capacitance (Ciss) is a maximum of 9pF at 15V. This surface mount component operates across a temperature range of -55°C to 150°C. The NTUD3127CT5G is suitable for applications such as battery management, power switching, and general-purpose logic control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 125mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 160mA, 140mA |
| Input Capacitance (Ciss) (Max) @ Vds | 9pF @ 15V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 100mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-963 |
Request a Quote
Clients Also Buy
NVMFD5C446NWFT1G
MOSFET 2N-CH 40V 24A/127A 8DFN
NVLJD4007NZTBG
MOSFET 2N-CH 30V 0.245A 6WDFN
NVMJD5D4N04CTWG
MOSFET N-CH 40V LFPAK56
