NTQD6968R2
MOSFET 2N-CH 20V 6.6A 8TSSOPManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTQD6968R2 is a dual N-channel MOSFET array designed for efficient power switching applications. This component offers a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.6A at 25°C. The low on-resistance (Rds On) of 22mOhm at 6.6A and 4.5V, combined with a logic-level gate feature, ensures effective drive and reduced conduction losses. Featuring a maximum power dissipation of 1.42W and a gate charge (Qg) of 20nC at 4.5V, this MOSFET array is suitable for demanding applications. The 8-TSSOP package provides a compact footprint for surface mounting. Typical industries utilizing this component include consumer electronics and industrial automation. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.42W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 16V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 6.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-TSSOP |