NTQD6968NR2G
MOSFET 2N-CH 20V 6.2A 8TSSOPManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTQD6968NR2G is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 6.2A at 25°C. The device exhibits a low on-resistance of 22mOhm maximum at 7A and 4.5V Vgs, coupled with a logic-level gate for compatibility with a wider range of drive signals. Key parameters include a gate charge (Qg) of 17nC maximum at 4.5V and input capacitance (Ciss) of 630pF maximum at 16V. Packaged in an 8-TSSOP (0.173", 4.40mm Width) for surface mounting, this array operates across a temperature range of -55°C to 150°C. The NTQD6968NR2G is suitable for use in automotive and industrial systems requiring compact and reliable power management solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.39W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 16V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-TSSOP |