NTQD6968N
MOSFET 2N-CH 20V 6.2A 8TSSOPManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NTQD6968N is a dual N-channel MOSFET array in an 8-TSSOP package, designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 6.2A at 25°C. The device offers a low Rds On of 22mOhm at 7A and 4.5V, with a logic level gate for enhanced compatibility. Key electrical parameters include a Gate Charge (Qg) of 17nC (max) at 4.5V and an Input Capacitance (Ciss) of 630pF (max) at 16V. The NTQD6968N operates across a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.39W. This MOSFET array is suitable for use in automotive, industrial automation, and power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.39W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 16V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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