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NTQD6866R2

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NTQD6866R2

MOSFET 2N-CH 20V 4.7A 8TSSOP

Manufacturer: onsemi

Categories: FET, MOSFET Arrays

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The onsemi NTQD6866R2 is a dual N-channel MOSFET array designed for general-purpose switching applications. Housed in an 8-TSSOP package, this device features a continuous drain current capability of 4.7A per channel and a drain-to-source voltage rating of 20V. The MOSFET array offers a low on-resistance of 32mOhm at 6.9A and 4.5V, minimizing conduction losses. Its logic-level gate ensures compatibility with lower voltage control signals. With a maximum power dissipation of 940mW and an operating temperature range of -55°C to 150°C, it is suitable for demanding environments. Applications include power management, battery charging circuits, and motor control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TSSOP (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max940mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.7A
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 16V
Rds On (Max) @ Id, Vgs32mOhm @ 6.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs22nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device Package8-TSSOP

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