NTMFD5C650NLT1G
MOSFET 2N-CH 60V 21A/111A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMFD5C650NLT1G is a dual N-channel MOSFET array designed for high-performance applications. This component features a 60V drain-to-source voltage (Vdss) and offers a continuous drain current of 21A at an ambient temperature (Ta) and 111A at a case temperature (Tc). With a maximum power dissipation of 3.5W (Ta) and 125W (Tc), this device is suitable for demanding thermal environments. The low on-resistance of 4.2mOhm at 20A and 10V (Vgs) minimizes conduction losses. Key electrical parameters include a gate charge (Qg) of 37nC (max) and input capacitance (Ciss) of 2546pF (max). The NTMFD5C650NLT1G is housed in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) package, enabling surface mounting. Its robust operating temperature range of -55°C to 175°C (TJ) makes it ideal for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.5W (Ta), 125W (Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 111A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2546pF @ 25V |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 37nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 98µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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