NTMFD5C470NLT1G
MOSFET 2N-CH 40V 11A/36A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMFD5C470NLT1G is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a 40V drain-to-source voltage rating and supports continuous drain currents of 11A at ambient temperature and 36A at case temperature. Its low on-resistance of 11.5mOhm at 5A, 10V gate-source voltage minimizes conduction losses. The device is housed in an 8-PowerTDFN (5x6) Dual Flag (SO8FL-Dual) package, suitable for surface mounting. Key electrical characteristics include a maximum gate charge of 9nC and input capacitance of 590pF. The NTMFD5C470NLT1G operates across a temperature range of -55°C to 175°C and offers a maximum power dissipation of 3W (Ta) or 24W (Tc). This MOSFET array is commonly utilized in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3W (Ta), 24W (Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 36A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 25V |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 20µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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