NTMFD5875NLT1G
MOSFET 2N-CH 60V 7A/22A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The onsemi NTMFD5875NLT1G is a dual N-channel MOSFET array designed for high-efficiency switching applications. Featuring a 60V drain-source voltage rating and a continuous drain current capability of 7A (ambient) and 22A (case) at 25°C, this component offers robust performance. Its low Rds(on) of 33mOhm at 7.5A and 10V, combined with a logic level gate, ensures optimal power management. The 8-DFN (5x6) Dual Flag (SO8FL-Dual) package provides excellent thermal dissipation, with a maximum power rating of 3.2W (ambient) and 32W (case). Key parameters include a gate charge of 5.9nC at 4.5V and input capacitance of 540pF at 25V. This device is commonly utilized in automotive, industrial power, and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.2W (Ta), 32W (Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta), 22A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.9nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
Request a Quote
Clients Also Buy
NVLJD4007NZTBG
MOSFET 2N-CH 30V 0.245A 6WDFN
FDG6303N_D87Z
MOSFET 2N-CH 25V 0.5A SC88
NVMFD5485NLT1G
MOSFET 2N-CH 60V 5.3A 8DFN
