NTMFD4C88NT1G
MOSFET 2N-CH 30V 11.7A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMFD4C88NT1G is a dual N-channel MOSFET array designed for high-efficiency power management applications. This component features a 30V drain-source voltage rating and offers continuous drain currents of 11.7A and 14.2A at 25°C. The low on-resistance of 5.4mOhm at 10A, 10V (Id, Vgs) ensures minimal power dissipation, with a maximum power rating of 1.1W. The asymmetrical configuration and 8-DFN (5x6) package with surface mount capability make it suitable for compact designs. Key electrical parameters include a gate charge of 22.2nC (max) at 10V and input capacitance of 1252pF (max) at 15V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET array is utilized in automotive and industrial power supply circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11.7A, 14.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 1252pF @ 15V |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22.2nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
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