NTMFD4C86NT3G
MOSFET 2N-CH 30V 11.3A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NTMFD4C86NT3G is a 2 N-Channel, asymmetrical MOSFET array housed in an 8-DFN (5x6) package. This device offers a Drain-to-Source voltage (Vdss) of 30V and continuous drain currents of 11.3A and 18.1A at 25°C. With a low Rds On of 5.4mOhm at 30A and 10V, and a maximum power dissipation of 1.1W, it is suitable for demanding power management applications. Key parameters include a gate charge (Qg) of 22.2nC at 10V and input capacitance (Ciss) of 1153pF at 15V. The operating temperature range is -55°C to 150°C. This component finds application in automotive and industrial power systems. The NTMFD4C86NT3G is supplied on a Tape & Reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11.3A, 18.1A |
| Input Capacitance (Ciss) (Max) @ Vds | 1153pF @ 15V |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 30A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22.2nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
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