NTMFD4C86NT1G
MOSFET 2N-CH 30V 11.3A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMFD4C86NT1G is a 2 N-Channel MOSFET array designed for high-performance applications. This device features a 30V Drain-to-Source Voltage (Vdss) capability and supports continuous drain currents of 11.3A and 18.1A at 25°C. The on-resistance (Rds On) is specified at a maximum of 5.4mOhm at 30A and 10V. With a maximum power dissipation of 1.1W, this MOSFET array is housed in an 8-DFN (5x6) package, suitable for surface mounting. Key parameters include an input capacitance (Ciss) of 1153pF (max) at 15V and a gate charge (Qg) of 22.2nC (max) at 10V. The threshold voltage (Vgs(th)) is 2.2V at 250µA. This component operates across a temperature range of -55°C to 150°C. The NTMFD4C86NT1G is commonly utilized in power management solutions, automotive electronics, and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11.3A, 18.1A |
| Input Capacitance (Ciss) (Max) @ Vds | 1153pF @ 15V |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 30A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22.2nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
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