NTMFD4C85NT3G
MOSFET 2N-CH 30V 15.4A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMFD4C85NT3G is a dual N-channel asymmetrical MOSFET array designed for demanding applications. This component features a 30V Drain-Source Voltage (Vdss) and offers continuous drain current ratings of 15.4A and 29.7A at 25°C for its two channels. With a low on-resistance of 3mOhm at 20A and 10V, it minimizes conduction losses. The NTMFD4C85NT3G is packaged in an 8-DFN (5x6) footprint suitable for surface mounting and operates effectively across a temperature range of -55°C to 150°C. Key electrical characteristics include a maximum gate charge (Qg) of 32nC at 10V and an input capacitance (Ciss) of 1960pF at 15V. This MOSFET array finds utility in power management solutions across automotive and industrial sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.13W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 15.4A, 29.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1960pF @ 15V |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
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