NTMFD4C85NT1G
MOSFET 2N-CH 30V 15.4A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMFD4C85NT1G is a 30V, dual N-channel MOSFET array in an 8-DFN (5x6) package. This device features asymmetrical configurations with continuous drain currents of 15.4A and 29.7A at 25°C. The low on-resistance of 3mOhm at 20A and 10V, combined with a maximum power dissipation of 1.13W, makes it suitable for demanding power management applications. Key electrical parameters include a gate charge of 32nC (max) and input capacitance of 1960pF (max). The NTMFD4C85NT1G is designed for surface mounting and operates across a temperature range of -55°C to 150°C. This component is utilized in industries such as automotive and industrial power solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.13W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 15.4A, 29.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1960pF @ 15V |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
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