NTMFD4C20NT3G
MOSFET 2N-CH 30V 9.1A/13.7A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTMFD4C20NT3G is a 30V dual N-channel MOSFET array designed for high-performance applications. This component features a continuous drain current capability of 9.1A for one channel and 13.7A for the other at 25°C, with a maximum power dissipation of 1.09W and 1.15W respectively. The package is an 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical), suitable for surface mounting. Key electrical specifications include a Vgs(th) of 2.1V at 250µA and a low Rds On of 7.3mOhm at 10A and 10V. Gate charge (Qg) is specified at a maximum of 9.3nC at 4.5V, and input capacitance (Ciss) is 970pF maximum at 15V. This MOSFET array operates within a temperature range of -55°C to 150°C. It finds application in automotive and industrial power management systems. This device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.09W, 1.15W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.1A, 13.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 970pF @ 15V |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
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