NTMFD4C20NT1G
MOSFET 2N-CH 30V 9.1A/13.7A 8DFNManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NTMFD4C20NT1G is a dual N-channel MOSFET array designed for advanced power management applications. This device features a 30V drain-to-source voltage rating and supports continuous drain currents of 9.1A and 13.7A at 25°C, with a maximum power dissipation of 1.09W and 1.15W respectively. The low Rds(on) of 7.3mOhm at 10A and 10V ensures efficient operation with minimal power loss. The MOSFET array is housed in a compact 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) package, suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 9.3nC (max) at 4.5V and input capacitance (Ciss) of 970pF (max) at 15V. The threshold voltage (Vgs(th)) is 2.1V (max) at 250µA. The NTMFD4C20NT1G is manufactured using advanced MOSFET technology and is supplied in tape and reel packaging. This component is widely utilized in automotive, industrial power control, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.09W, 1.15W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.1A, 13.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 970pF @ 15V |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
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