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NTMFD4902NFT3G

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NTMFD4902NFT3G

MOSFET 2N-CH 30V 10.3A 8DFN

Manufacturer: onsemi

Categories: FET, MOSFET Arrays

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The onsemi NTMFD4902NFT3G is a dual N-channel MOSFET array designed for efficient power management. This component features a 30V drain-source voltage rating and offers continuous drain currents of 10.3A and 13.3A at 25°C. With a low on-resistance of 6.5mOhm at 10A and 10V, and a gate charge of 9.7nC at 4.5V, it is optimized for high-efficiency switching applications. The device utilizes MOSFET technology and is packaged in an 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) surface-mount configuration, supplied on tape and reel. Its operating temperature range is -55°C to 150°C. The NTMFD4902NFT3G is suitable for use in automotive and industrial power supply applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual), Schottky
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.1W, 1.16W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10.3A, 13.3A
Input Capacitance (Ciss) (Max) @ Vds1150pF @ 15V
Rds On (Max) @ Id, Vgs6.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs9.7nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

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